Title :
Simple Formulae for the Effective Plus-Factor for Transient Enhanced Diffusion
Author :
Hobler, G. ; Moroz, V.
Author_Institution :
University of Technology Vienna, Austria
fDate :
11-13 September 2000
Keywords :
Annealing; Implants; Ion implantation; Least squares methods; MOSFETs; Root mean square; Silicon; Transient analysis;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194741
