Dielectric Layer Planarization using Chemical-Mechanical-Polishing

Application of Chemical-mechanical-polishing of the dielectric layer in multilevel metallization is introduced. To acheive globally planarized dielectric surfaces in severe topologies, some structures using mask and stop layer or double deposited dielectric layers for selective polishing are proposed. The characteristics of this polishing process were studied on wafer with real device topology. Experimental results were founded by measuring electrical characteristics and electromigration of metal lines and monitoring the cross-sectional view of planarized dielectric layer in the wafer.