DocumentCode :
1917647
Title :
Modelling of Intrinsic Aluminum Diffusion for Future Power Devices
Author :
Krause, O. ; Pichler, P. ; Ryssel, H.
Author_Institution :
University Erlangen-Nuremberg, Germany
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
176
Lastpage :
179
Keywords :
Aluminum; Electron devices; Fabrication; Impurities; Integrated circuit modeling; Integrated circuit technology; Oxidation; Silicon; Space charge; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194743
Filename :
1503673
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1917647
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