Title :
Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel Profiles
Author :
Voinigescu, S.P. ; Salama, C.A.T. ; Noel, Jean-Philippe ; Kamins, T.I.
Author_Institution :
Department of Electrical & Computer Engineering, University of Toronto, Toronto, ON, M5S 1A4, Canada
Abstract :
The first SiGe p-MOSFETs with triangular Ge profiles, fabricated in a Si CMOS-compatible LOCOS isolated process are reported. The feasibility of triangular profiles with peak Ge mole fractions as high as 50% is demonstrated for both CVD and MBE MOSFETs. The transconductance of 3 ¿m devices with 0-40% Ge profiles is 34 mS/mm, 100% higher than that of the corresponding Si p-MOSFET fabricated on the same chip.
Keywords :
Annealing; BiCMOS integrated circuits; Boron; Councils; FETs; Germanium silicon alloys; Laboratories; MOSFET circuits; Silicon germanium; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
