Title :
An Efficient Channel Optimisation Method for 0.1 μm and Below MOSFET´s
Author :
Honoré, J-C ; Gautier, J.
Author_Institution :
LETI (CEA - Technologies Avancées), 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
Abstract :
This paper reports on an efficient methodology to optimise conventional channel and Pulse Shaped Doping profile (PSD). We clarify the different physical phenomena responsible of leakage current increasing, then we compare and discuss the impact of the optimised profiles on device performances in term of current drivability, Drain Induced Barrier Lowering (DIBL), mobility and speed considerations.
Keywords :
Degradation; Doping profiles; Implants; Impurities; Leakage current; MOSFET circuits; Optimization methods; Pulse shaping methods; Space vector pulse width modulation; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
