Title :
Low Temperature Operation as a Tool to Investigate Second Order Effects in Submicron MOSFET´s
Author :
Gutierrez D., Edmundo A. ; Deferm, Ludo
Author_Institution :
Instituto Nacional de AstrofÃ\xadsica, Optica y Electrónica (INAOE), Integrated Circuits Design Group, P.O. Box 216 & 51, Z. P. 72000, Puebla, MÃ\x89XICO.
Abstract :
In this paper the electrical performance of submicron MOS transistors at low temperatures is explored. This way we found that second-order effects like; the bias dependent series resistance, the second substrate current hump and some others, are amplified allowing so an easier way to study them and to determine their physical origin.
Keywords :
CMOS technology; Digital TV; Electric resistance; Helium; Integrated circuit synthesis; MOSFETs; Space technology; Surface resistance; Temperature; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
