Title :
Capacitance Enhancement by Mesopore Formation for sub 100nm Deep Trench DRAM Technology
Author :
Birner, A. ; Franosch, M. ; Goldbach, M. ; Lehmann, V. ; Schumann, D.
Author_Institution :
Infineon Technologies, Dresden, Germany
fDate :
11-13 September 2000
Keywords :
Capacitance; Capacitors; Charge carriers; Contacts; Etching; Mesoporous materials; Random access memory; Silicon; Thyristors; Wire;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194749
