DocumentCode :
1917844
Title :
Best Structures for Deep Submicron (0.1-0.3/spl mu/m) Mos Devices
Author :
Tasch, A.F.
Author_Institution :
University of Texas, Austin
fYear :
1991
fDate :
17-19 June 1991
Keywords :
History; Hot carriers; Integrated circuit technology; MOS devices; MOS integrated circuits; MOSFET circuits; Manufacturing; Power supplies; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664660
Filename :
664660
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1917844
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