Title :
An RF-insensitive hybrid electroexplosive device incorporating an integral filter
Author :
Henderson, John H. ; Baginski, Thomas A.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
As electroexplosive devices (EEDs) are increasingly exposed to the general public, their possible accidental initiation due to their susceptibility to electromagnetic interference (EMI) becomes a greater concern. Unintended signals coupled to the EED have usually been attenuated by the insertion of an L-C filter in the leads of the EED. However, these have typically been bulky, heavy, and expensive, and can often not be installed close to the EED itself, thereby reducing the effectiveness of the filter. The authors discuss a filter and an EED which are mounted on the same substrate using hybrid microelectronics technology and surface-mount components. The resulting structure is small, lightweight, inexpensive, and mechanically robust. Also demonstrated is a new EMI-insensitive EED, the semiconductor junction igniter. An electrical model was developed for the filter and EED, and it was verified with impedance measurements. Voltage attenuation and power dissipation were calculated, and the temperature of the devices under excitation was measured, to demonstrate the effectiveness of the filter
Keywords :
electric ignition; elemental semiconductors; etching; explosions; filters; mining; radiofrequency interference; safety; semiconductor devices; semiconductor technology; silicon; surface mount technology; L-C filter; Si; accidental initiation; electrical model; electromagnetic interference; excitation; hybrid electroexplosive device; impedance measurements; integral filter; microelectronics technology; power dissipation; safety; semiconductor junction igniter; substrate; surface-mount components; susceptibility; temperature; voltage attenuation; Electromagnetic interference; Filters; Impedance measurement; Microelectronics; Optical attenuators; Power dissipation; Robustness; Substrates; Surface-mount technology; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-1462-X
DOI :
10.1109/IAS.1993.299229