Novel DRAM Cell Transistor using Self Aligned Local Field Implantation (SALFI) for Enhanced Data Retention Time

Author

Lee, Jae-kyu ; Lee, Sang-Hyeon ; Ha, Daewon ; Kim, Kinam

Author_Institution

Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea

fYear

2000

fDate

11-13 September 2000

Firstpage

284

Lastpage

287

Keywords

Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194770

Filename

1503700

Link To Document