DocumentCode :
1918263
Title :
Novel DRAM Cell Transistor using Self Aligned Local Field Implantation (SALFI) for Enhanced Data Retention Time
Author :
Lee, Jae-kyu ; Lee, Sang-Hyeon ; Ha, Daewon ; Kim, Kinam
Author_Institution :
Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
284
Lastpage :
287
Keywords :
Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194770
Filename :
1503700
Link To Document :
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