DocumentCode :
1918320
Title :
Contribution of interface traps to valence band electron tunneling in PMOS devices
Author :
Pompl, T. ; Kerber, M. ; Wurzer, H. ; Eisele, I.
Author_Institution :
Infineon Technologies AG, Munich, Germany
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
292
Lastpage :
295
Keywords :
Current density; Current measurement; Density measurement; Electrical resistance measurement; Electron traps; Equations; MOS devices; Silicon; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194772
Filename :
1503702
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1918320
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