DocumentCode
1918320
Title
Contribution of interface traps to valence band electron tunneling in PMOS devices
Author
Pompl, T. ; Kerber, M. ; Wurzer, H. ; Eisele, I.
Author_Institution
Infineon Technologies AG, Munich, Germany
fYear
2000
fDate
11-13 September 2000
Firstpage
292
Lastpage
295
Keywords
Current density; Current measurement; Density measurement; Electrical resistance measurement; Electron traps; Equations; MOS devices; Silicon; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194772
Filename
1503702
Link To Document