DocumentCode
1918333
Title
Measurement of the Vertical and Lateral Diffusion of Interstitials in Si
Author
Peters, C.J. ; Xu, D. -X ; McCaffrey, J. ; Rolfe, S.J. ; Noel, J.-P. ; Tarr, N.G.
Author_Institution
Department of Electronics, Carleton University, Ottawa, Ontario K1S 5B6, Canada
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
239
Lastpage
242
Abstract
The enhanced diffusion of boron and XTEM measurements were used to qualitatively measure the lateral and vertical diffusion of implantation induced interstitials in silicon. It is also found that platinum silicide contacts can be used to reduce the effects of implant induced damage while maintaining low contact resistance.
Keywords
Boron; Councils; Electrical resistance measurement; Implants; Platinum; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435710
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