DocumentCode
1918356
Title
Oxygen Precipitation in Cz-Si under Uniform Stress
Author
Misiuk, A. ; Datsenko, L.I. ; Surma, B. ; Popov, V.P.
Author_Institution
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
243
Lastpage
246
Abstract
Phenomena related to oxygen precipitation in Czochralski grown silicon subjected to hydrostatic pressure up to 2.5 GPa at ambient temperature and up to 1.35 GPa at 1230 - 1620K were investigated by FTIR, X-ray methods, chemical selective etching and TEM. Depending on the initial oxygen concentration and preannealing conditions, uniform stress influences markedly the oxygen - related defect structure of Cz-Si.
Keywords
Annealing; Capacitive sensors; Electrons; Etching; Oxygen; Physics; Silicon; Temperature dependence; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435711
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