Title :
Next-generation non-volatile memory
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
Recently, Next-generation non-volatile memories continue to receive great attention due to its scalability, rapid read and write performance, simple structure, and easy incorporation with CMOS process. There are many candidates for ideal non-volatile memory, such as Magnetro-resistive RAM (MRAM), Phase change RAM (PCRAM), and Resistive RAM (RRAM). This talk will discuss the strengths and weaknesses of different emerging non-volatile memory technologies and introduce the current status of the new non-volatile memory research program at ITRI.
Keywords :
CMOS integrated circuits; circuit reliability; random-access storage; CMOS process; magnetroresistive random access memory; nonvolatile memory; phase change RAM; resistive RAM; CMOS process; CMOS technology; Charge coupled devices; Helium; Nanoelectronics; Nonvolatile memory; Phase change random access memory; Power electronics; Read-write memory; Scalability;
Conference_Titel :
Memory Technology, Design and Testing, 2007. MTDT 2007. IEEE International Workshop on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1656-1
Electronic_ISBN :
1087-4852
DOI :
10.1109/MTDT.2007.4547616
