DocumentCode :
1918437
Title :
Capacitor Test Structures for C-V Measurements on CMOS Devices with Sub-20 Å Oxides
Author :
Ahmed, K. ; Ibok, E. ; Hauser, J.
Author_Institution :
Conexant Systems, Inc., Newport Beach, CA, USA
fYear :
2000
fDate :
11-13 Sept. 2000
Firstpage :
308
Lastpage :
311
Keywords :
Attenuation; Capacitance measurement; Capacitance-voltage characteristics; Contact resistance; Electrical resistance measurement; MOS capacitors; Parasitic capacitance; Strontium; Testing; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Conference_Location :
Cork, Ireland
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194776
Filename :
1503706
Link To Document :
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