1918437

Capacitor Test Structures for C-V Measurements on CMOS Devices with Sub-20 Å Oxides

Ahmed, K. ; Ibok, E. ; Hauser, J.

Conexant Systems, Inc., Newport Beach, CA, USA

2000

11-13 Sept. 2000

308

311

Attenuation; Capacitance measurement; Capacitance-voltage characteristics; Contact resistance; Electrical resistance measurement; MOS capacitors; Parasitic capacitance; Strontium; Testing; Tunneling;

English

ieee

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Cork, Ireland

2-86332-248-6

conf

10.1109/ESSDERC.2000.194776

1503706