DocumentCode
1918441
Title
The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory
Author
Wang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Lai, Chao-Sung
Author_Institution
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
3-5 Dec. 2007
Firstpage
51
Lastpage
54
Abstract
2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.
Keywords
semiconductor storage; tunnelling; ONO thickness; drain disturbance; gate disturbance; oxide tunneling; polarity dependence; wrapped-select-gate SONOS memory; Chaos; EPROM; Fabrication; Leakage current; Low voltage; Nonvolatile memory; SONOS devices; Stress; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 2007. MTDT 2007. IEEE International Workshop on
Conference_Location
Taipei
ISSN
1087-4852
Print_ISBN
978-1-4244-1656-1
Electronic_ISBN
1087-4852
Type
conf
DOI
10.1109/MTDT.2007.4547617
Filename
4547617
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