Title :
The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory
Author :
Wang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Lai, Chao-Sung
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu
Abstract :
2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.
Keywords :
semiconductor storage; tunnelling; ONO thickness; drain disturbance; gate disturbance; oxide tunneling; polarity dependence; wrapped-select-gate SONOS memory; Chaos; EPROM; Fabrication; Leakage current; Low voltage; Nonvolatile memory; SONOS devices; Stress; Threshold voltage; Tunneling;
Conference_Titel :
Memory Technology, Design and Testing, 2007. MTDT 2007. IEEE International Workshop on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1656-1
Electronic_ISBN :
1087-4852
DOI :
10.1109/MTDT.2007.4547617
