Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides

Author

Ielmini, D. ; Spinelli, A.S. ; Lacaita, A. ; Ghidini, G.

Author_Institution

Politecnico di Milano, Italy

fYear

2000

fDate

11-13 September 2000

Firstpage

312

Lastpage

315

Keywords

Current density; Degradation; Electron traps; Interface states; Low voltage; MOS devices; Monitoring; Spontaneous emission; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194777

Filename

1503707

Link To Document