DocumentCode :
1918505
Title :
Study of Local Silicon Oxidation with Calibrated Nitride Model
Author :
Ferreira, P. ; Senez, V. ; Collard, D. ; Baccus, B.
Author_Institution :
IEMN-ISEN, UMR CNRS, 41 boulevard Vauban, 59046 Lille cedex, France
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
259
Lastpage :
262
Abstract :
Typical 2D effects such as oxide thinning and bird´s beak size decrease with nitride masks and windows size reduction are observed in submicron isolation structures. Such phenomena depend on the stresses generated by the oxidation process and consequently on the mechanical properties of the IC-materials. In this paper, an elastovisco-plastic modelling of the silicon oxidation is used for the calibration of the nitride properties and applied to various LOCOS processes.
Keywords :
Calibration; Kinetic theory; Mechanical factors; Oxidation; Plastics; Shape; Silicon; Stress; Temperature dependence; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435715
Link To Document :
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