Effect of Silicidation Schemes on Interface Contact Resistance

The effect of silicidation schemes on interface contact resistance has been examined. Evaluation of conventional process (pre-formed junctions), pre-amorphization process, and concurrent process (with silicidation and junction formation at the same time) impacts on interface contact resistance are presented. It is found that preamorphization process using Ge improves the CoSi2/Si contact resistance slightly compared to the conventional process. The concurrent process yields a significantly higher value for TiSi2/p⁺ contacts.