Three-dimensional millimeter-wave photonic integrated circuits on Si

Author

Minotani, T. ; Royter, Yakov ; Ishii, H. ; Hirata, A. ; Machida, K. ; Sasaki, A. ; Nagatsuma, T.

Author_Institution

NTT Telecommun. Energy Labs., Kanagawa, Japan

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

57

Abstract

We have demonstrated two millimeter-wave photonic integrated circuits: a coplanar waveguide (CPW) and a patch antenna, each of which is monolithically integrated with a high-speed InP/InGaAs photodiode on Si substrate. The passive elements are made on a thick low-k interlayer dielectric which makes the attenuation of the CPW much lower than that for a CPW on Si and constant from DC to 100 GHz. Furthermore, we optimized the via geometry to maintain signal waveform integrity. For the patch antenna, we demonstrated the radiation of millimeter-wave signal with power of over 0.1 mW at 120 GHz.

Keywords

MIMIC; coplanar waveguides; elemental semiconductors; integrated optics; microstrip antennas; microwave photonics; millimetre wave antennas; photodiodes; silicon; 0 to 100 GHz; 0.1 mW; 120 GHz; InP-InGaAs; Si; Si substrate; coplanar waveguide; high-speed InP/InGaAs photodiode; low-k interlayer dielectric; monolithic integration; passive element; patch antenna; signal waveform integrity; three-dimensional millimeter-wave photonic integrated circuit; via geometry; Attenuation; Coplanar waveguides; Dielectric substrates; Geometry; Indium gallium arsenide; Indium phosphide; Millimeter wave integrated circuits; Patch antennas; Photodiodes; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966838

Filename

966838