• DocumentCode
    1918675
  • Title

    Large signal compact modeling of the dependence of Early voltage with driving mode in Si/Si(1-x)Ge(x) bipolar transistors

  • Author

    Assous, M. ; Mouis, M.

  • Author_Institution
    France Telecom, Meylan, France
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    344
  • Lastpage
    347
  • Keywords
    Bipolar transistors; Current measurement; Electrons; Force measurement; Germanium silicon alloys; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Telecommunications; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194785
  • Filename
    1503715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1918675