Design of power efficient power amplifier for B3G base stations

Author

Hussaini, Abubakar Sadiq ; Gwandu, Bashir A L ; Abd-Alhameed, Raed ; Rodriguez, Jonathan

Author_Institution

Sch. of Eng., Design & Technol., Univ. of Bradford, Bradford, UK

fYear

2010

fDate

11-12 Nov. 2010

Firstpage

89

Lastpage

92

Abstract

Fourth generation systems require the use of both amplitude and phase modulation to efficiently utilize the available spectrum and to obtain high data rates, hence imposing stringent requirements on the power amplifier in terms of efficiency and linearity and requires the power amplifier to operate linearly and efficiently. The B3G base station transceiver Doherty power amplifier was designed to operate over the frequency range of 3.47GHz to 3.53GHz mobile WiMAX band using Freescale´s N-Channel Enhancement-Mode Lateral MOSFET Transistor, MRF7S38010HR3; The performances of the Doherty amplifier are compared with that of the conventional Class AB amplifier. The results of 43 dBm output power and 66% power added efficiency are achieved.

Keywords

3G mobile communication; 4G mobile communication; MOSFET; WiMax; phase modulation; power amplifiers; transceivers; transistors; B3G base stations; Doherty amplifier; MRF7S38010HR3; fourth generation systems; frequency 3.47 GHz to 3.53 GHz; mobile WiMAX; n-channel enhancement-mode lateral MOSFET transistor; phase modulation; power efficient power amplifier; Impedance; Linearity; Power MOSFET; Power amplifiers; Power generation; Radio frequency; 3.5GHz band; 4G; Class AB; Doherty RF power amplifier; OFDM; base station; mobile WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Telecommunications (ISETC), 2010 9th International Symposium on

Conference_Location

Timisoara

Print_ISBN

978-1-4244-8457-7

Type

conf

DOI

10.1109/ISETC.2010.5679310

Filename

5679310