DocumentCode
1918698
Title
Deep UV Lithography for 0.35μm Design Rules Application to CMOS Technology with Three Metallization Levels
Author
Vinet, F. ; Buffet, N. ; Heitzmann, M. ; Laurens, M. ; Le Cornec, C. ; Lerme, M. ; Molle, P. ; Morand, Y. ; Mourier, T. ; Ullmann, H. ; Vizioz, C.
Author_Institution
GRESSI-LETI (CEA-Technologies Avancées), DMEL-CENG 17 rue des Martyrs 38054 GRENOBLE Cedex 9 France. Tel (33) 76 88 38 28 - Fax (33) 76 88 51 83
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
299
Lastpage
302
Abstract
DUV excimer based imaging appears to be one of the best candidate for printing subhalf micron devices. In this paper we have investigated the potentiality of such a technique to process 0.35 μm CMOS devices with 3 levels of metallization. Depending on the level to process, positive or negative tone chemically amplified resists have been used. The processing conditions as well as exposure and focus latitudes for the most critical levels (gate, contact, vias and metall) are reported. From electrical results obtained on the batches processed with these conditions, we can conclude that DUV lithography achieves the requirements of 0.35 μm technologies.
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435722
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