DocumentCode :
1918745
Title :
Characterization of Two E´ Center Charge Traps in Conventionally Grown Thermal SiO2 ON Si
Author :
Conley, J.F., Jr. ; Lenahan, P.M. ; Evans, H.L. ; Lowry, R.K. ; Morthorst, T.J.
Author_Institution :
Penn State University, University Park, PA 16802
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
309
Lastpage :
312
Abstract :
We use electron spin resonance to characterize two E´ variant charge traps in conventionally grown thermal SiO2.
Keywords :
Corona; Electron traps; Laboratories; Paramagnetic materials; Paramagnetic resonance; Reliability engineering; Signal generators; Silicon; Thermal engineering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435724
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1918745
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