Title :
RF mixers using standard digital CMOS 0.35 /spl mu/m process
Author :
Geffroy, V. ; De Astis, G. ; Bergeault, E.
Author_Institution :
ACCO, Saint-Germain-En-Laye, France
Abstract :
The performance of doubly-balanced active and resistive RF CMOS mixers is presented following measurements at 1.8-GHz RF frequency. The active mixer has demonstrated 10.4-dB gain, 7-dB SSB NF, -6 dBm IIP3 and consumes 9.7 mA under 3 V. The passive mixer has demonstrated 7.5-dB loss, 10-dB SSB NF and +16-dBm of input IP3.
Keywords :
CMOS digital integrated circuits; UHF integrated circuits; UHF mixers; active networks; passive networks; 0.35 micron; 1.8 GHz; 10.4 dB; 7.5 dB; active RF CMOS mixers; doubly-balanced; gain; linearity; loss; performance; resistive RF CMOS mixers; standard digital CMOS; three-layer metal planar process; Amplitude modulation; CMOS process; CMOS technology; Costs; Foundries; Mixers; Noise measurement; Production; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966844
