DocumentCode :
1918803
Title :
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
Author :
Pirovano, A. ; Lacaita, A.L. ; Pacelli, A. ; Benvenuti, A.
Author_Institution :
Politecnico di Milano, Italy
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
364
Lastpage :
367
Keywords :
Capacitance; Capacitance-voltage characteristics; Doping profiles; Inverse problems; Optimization; Research and development; Shape; Spatial resolution; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194790
Filename :
1503720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1918803
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