DocumentCode
1918821
Title
Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET
Author
Duane, R. ; Concannon, A. ; McCarthy, D. ; Mathewson, A.
Author_Institution
National Microelectronics Research Centre, Cork, Ireland
fYear
2000
fDate
11-13 September 2000
Firstpage
368
Lastpage
371
Keywords
Charge pumps; Current measurement; Doping profiles; Hot carriers; Interface states; Inverse problems; MOSFET circuits; Numerical simulation; Semiconductor process modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194791
Filename
1503721
Link To Document