Title :
Comparison of two High-Frequency Noise Characterization Methods for SiGe HBTs
Author :
Malm, B.G. ; Grahn, J.V. ; Östling, M. ; Stenarson, J.
Author_Institution :
Royal Institute of Technology, Kista, Sweden
fDate :
11-13 September 2000
Keywords :
Circuit noise; Frequency; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Noise figure; Noise measurement; Silicon germanium; Time measurement; Working environment noise;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194792
