• DocumentCode
    1918869
  • Title

    Scalable High Voltage Trenchgate Transistor for Flash

  • Author

    Landgraf, E. ; Hofmann, F. ; von Philipsborn, H.

  • Author_Institution
    University of Regensburg, Germany
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    380
  • Lastpage
    383
  • Keywords
    Breakdown voltage; Charge pumps; Decoding; Flash memory; Geometry; Leakage current; Liquid crystal displays; MOSFET circuits; Scalability; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194794
  • Filename
    1503724