Optimisation of N-Channel Trench MOS for Power Applications

Author

Hueting, R.J.E. ; Hurkx, G.A.M. ; Hijzen, E.A. ; Hodgskiss, S.W. ; Gajda, M.

Author_Institution

Philips Research Laboratories, Eindhoven, The Netherlands

fYear

2000

fDate

11-13 September 2000

Firstpage

388

Lastpage

391

Keywords

Automotive applications; Costs; Doping profiles; Geometry; Guidelines; Power supplies; Solid modeling; Substrates; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194796

Filename

1503726

Link To Document