Title :
Optimisation of N-Channel Trench MOS for Power Applications
Author :
Hueting, R.J.E. ; Hurkx, G.A.M. ; Hijzen, E.A. ; Hodgskiss, S.W. ; Gajda, M.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
11-13 September 2000
Keywords :
Automotive applications; Costs; Doping profiles; Geometry; Guidelines; Power supplies; Solid modeling; Substrates; Switches; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194796
