Three-Dimensional Simulation of Step Coverage for Contact Hole Metallization

Accurate simulation of topography processes requires three-dimensional models and algorithms for wafer topography evaluation. In this paper a model for three-dimensional physical vapor deposition is presented which converts information about the angular flux distribution of incident particles into local growth rates along the exposed surface. This model is coupled with an algorithm for general three-dimensional surface advancement to study the step coverage of deposited thin films for contact hole metallization.