DocumentCode :
1919078
Title :
Ultra-Thin High Quality Oxynitride Formed by NH3 Nitridation and High Pressure O2 Re-oxidation
Author :
Luo, T.Y. ; Watt, V.H.C. ; Al-Shareef, H.N. ; Brown, G.A. ; Karamcheti, A. ; Jackson, M.D. ; Huff, H.R. ; Evans, B. ; Kwong, D.L.
Author_Institution :
University of Texas at Austin, Austin, TX, USA
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
404
Lastpage :
407
Keywords :
Boron; Dielectrics; Electrodes; Furnaces; Leakage current; MOSFETs; Nitrogen; Silicon; Temperature; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194800
Filename :
1503730
Link To Document :
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