DocumentCode :
1919212
Title :
A GaAs Device Isolation Technique by Liquid Phase Chemical-Enhanced Oxidation
Author :
Wang, H.H. ; Chou, D.W. ; Wu, J.Y. ; Wang, Y.H. ; Houng, M.P.
Author_Institution :
National Cheng-Kung University, Tainan, Taiwan
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
432
Lastpage :
435
Keywords :
Chemicals; Etching; Gallium arsenide; Oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194807
Filename :
1503737
Link To Document :
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