DocumentCode :
1919251
Title :
Electrical characterisation of n and p-channel SiGe MOSFETs with gate oxides formed by plasma oxidation
Author :
Hall, Sebastian ; Zhang, Juyong ; Gallas, Brandon ; Evans, A.G.R.
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
440
Lastpage :
443
Keywords :
Capacitive sensors; Consumer electronics; Fabrication; Germanium silicon alloys; Heterojunctions; MOSFETs; Oxidation; Plasma materials processing; Plasma temperature; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194809
Filename :
1503739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919251
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