DocumentCode :
1919311
Title :
Transient I-V-Characteristics of OLEDs with Deep Traps
Author :
Scheinert, S. ; Paasch, G. ; Nguyen, P.H. ; Berleb, S. ; Brütting, W.
Author_Institution :
TU Ilmenau, Germany
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
444
Lastpage :
447
Keywords :
Current measurement; Current-voltage characteristics; Delay; Hysteresis; Indium tin oxide; Leakage current; Organic light emitting diodes; Organic materials; Steady-state; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194810
Filename :
1503740
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919311
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