Title :
P2–26: Thermodynamic mechanism responsible for growth of CuO nanowires by thermal oxidation
Author :
Luo, Yingxin ; Xu, N.S.
Author_Institution :
Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
Abstract :
A thermodynamic mechanism has been developed to explain the formation of aligned cupric oxide (CuO) nanowires synthesized by thermal oxidation of copper substrates at different conditions. The 1D morphology and temperature dependence of parameters of nanowires were explained.
Keywords :
copper; copper compounds; nanofabrication; nanowires; oxidation; semiconductor growth; semiconductor materials; semiconductor quantum wires; 1D morphology; Cu; CuO; aligned cupric oxide nanowires; copper substrates; nanowire parameters; temperature dependence; thermal oxidation; thermodynamic mechanism; Metals; Morphology; Nanowires; Oxidation; Substrates; Temperature dependence; CuO nanowire; growth mechanism; thermal oxidation;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563141
