DocumentCode
1919384
Title
P2–26: Thermodynamic mechanism responsible for growth of CuO nanowires by thermal oxidation
Author
Luo, Yingxin ; Xu, N.S.
Author_Institution
Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
fYear
2010
fDate
26-30 July 2010
Firstpage
173
Lastpage
174
Abstract
A thermodynamic mechanism has been developed to explain the formation of aligned cupric oxide (CuO) nanowires synthesized by thermal oxidation of copper substrates at different conditions. The 1D morphology and temperature dependence of parameters of nanowires were explained.
Keywords
copper; copper compounds; nanofabrication; nanowires; oxidation; semiconductor growth; semiconductor materials; semiconductor quantum wires; 1D morphology; Cu; CuO; aligned cupric oxide nanowires; copper substrates; nanowire parameters; temperature dependence; thermal oxidation; thermodynamic mechanism; Metals; Morphology; Nanowires; Oxidation; Substrates; Temperature dependence; CuO nanowire; growth mechanism; thermal oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563141
Filename
5563141
Link To Document