DocumentCode
1919407
Title
Single-component model of epitaxial growth of GaAs from gas phase at unstable state
Author
Voronin, V.O. ; Guba, S.K. ; Litvin, M.O.
fYear
2002
fDate
2002
Firstpage
209
Abstract
The mathematical model of growth of gallium arsenide in chloride gas transport system in a mode at which growth rate depends on speed of mass transfer and activation processes on a surface of a substrate is described.
Keywords
III-V semiconductors; gallium arsenide; mass transfer; modelling; semiconductor growth; vapour phase epitaxial growth; GaAs; activation processes; chloride gas transport system; epitaxial growth; gas phase; growth rate; mass transfer processes; mathematical model; single-component model; speed; substrate; surface; unstable state; Boundary conditions; Conducting materials; Epitaxial growth; Gallium arsenide; Kinetic theory; Mathematical model; Semiconductor materials; Semiconductor process modeling; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2002. Proceedings of the International Conference
Print_ISBN
966-553-234-0
Type
conf
DOI
10.1109/TCSET.2002.1015926
Filename
1015926
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