Title :
Improved three-dimensional GaAs inductors
Author :
Piernas, B. ; Nishikawa, K. ; Kamogawa, K. ; Nakagawa, T. ; Araki, K.
Author_Institution :
NTT Network Innovation Labs, Kanagawa, Japan
Abstract :
This paper clarifies the state-of-the-art GaAs inductors fabricated using three-dimensional (3-D) MMIC technology. A novel 3-D inductor is proposed and evaluated experimentally. Our 4.9 nH inductance achieves a peak Q factor of 35.93 with a resonant frequency of 8.07 GHz. To the knowledge of the authors, this performance is the highest yet reported for GaAs on-chip inductors. A 0.6-4 GHz band LNA is fabricated using 0.15 /spl mu/m GaAs PHEMT devices (f/sub max/=120 GHz) and the 3-D inductors. The fabricated LNA offers 12.3 dB gain and a noise figure under 1.5 dB with a d.c. power consumption of 27.84 mW.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; Q-factor; field effect MMIC; gallium arsenide; inductors; integrated circuit noise; 0.15 micron; 0.6 to 4 GHz; 1.5 dB; 12.3 dB; 27.84 mW; 3D GaAs inductors; 3D MMIC technology; 8.07 GHz; GaAs; GaAs PHEMT; LNA application; low-noise amplifier; on-chip inductors; Energy consumption; Gain; Gallium arsenide; Inductance; Inductors; MMICs; Noise figure; PHEMTs; Q factor; Resonant frequency;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966868