• DocumentCode
    1919508
  • Title

    Analytical Calculation of Avalanche and Thermal Snapback Points in Bipolar Transistors

  • Author

    Krabbenborg, B.H. ; de Graaff, H.C. ; Mouthaan, A.J.

  • Author_Institution
    University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    Analytical calculations of thermal-and avalanche snapback points are given to predict when thermal runaway in a bipolar transistor is initiated. These snapback points are used to construct the Safe Operating Area of the transistor in the case of a current and a voltage controlled base.
  • Keywords
    Bipolar transistors; Breakdown voltage; Equations; Hysteresis; Photonic band gap; Power dissipation; Semiconductor optical amplifiers; Temperature distribution; Thermal resistance; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919508