• DocumentCode
    1919529
  • Title

    GaInP-GaAs Quasi Self-Aligned HBT Technology

  • Author

    Launay, P. ; Driad, R. ; Benchimol, J.L. ; Alexandre, F. ; Dangla, J.

  • Author_Institution
    FRANCE TELECOM, CNET/PAB, LABORATOIRE DE BAGNEUX, 196, Avenue Henri Ravera, BP92225 BAGNEUX CEDEX, FRANCE. Tel: (33) 1 42 31 70 41, FAX: (33) 1 47 46 04 17
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    439
  • Lastpage
    442
  • Abstract
    A new GaInP-GaAs HBT technology is proposed in which a thin GaInP layer (40 nm) is used both as the emitter and as a passivation layer of the base. High DC current gain up to 40 are obtained, for a high C doping level (6 1019 cm¿3) in the base. The GaInP passivation is demonstrated with the achievement of the same DC current gain for small and large devices with emitter-base junction area of 16 to 105 ¿m2 respectively. Microwave performnances are discussed and both Ft and Fmax values are around 50 GHz whatever the HBT sizes.
  • Keywords
    Gallium arsenide; Gold; Heterojunction bipolar transistors; Microwave technology; Ohmic contacts; Passivation; Performance gain; Quasi-doping; Sputter etching; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919529