Title :
On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes
Author :
Belyaev, A.E. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Milenin, V.V. ; Sveshnikov, Yu.N.
Author_Institution :
Nat. Acad. of Sci. of Ukraine, Kyiv
Abstract :
We investigated a current flow mechanism in the Au-TiBx-n-GaN-i-AI2O3 Schottky barrier diodes, in which space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of l-V curves of forward-biased Schottky barriers showed that, in the 80-380 K temperature range, current flow occurs as tunneling along dislocations crossing the space-charge region. The dislocation density p estimated from l-V curves (in accordance with the model of tunneling along the dislocation line) was ap 1.7 times 10-7 cm-2.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; alumina; dislocation density; gallium compounds; gold; space charge; titanium compounds; wide band gap semiconductors; Au-TiB-GaN-Al2O3; Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes; GaN; current flow mechanism; de Broglie wavelength; dislocation density; l-V curves; space-charge region width; temperature 80 K to 380 K; Gallium nitride; III-V semiconductor materials; Metallization; Plasma temperature; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Temperature distribution; Tunneling;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368847
