Title :
Technique for Oxidation Parameters Definition, Based on Investigation of Defects Formation Images in Silicon Inversion MOS - Structures
Author :
Smyntyna, V.A. ; Kulinich, O.A. ; Glauberman, M.A. ; Chemeresyuk, G.G. ; Yatsunskiy, I.R. ; Sviridova, O.V.
Author_Institution :
Odessa Nat. Univ., Odessa
Abstract :
Presented in this paper is the model allowing detecting some of silicon oxidation parameters (distribution of oxygen concentration at the depth, Wegard factors, relative tension), designed on the basis of investigations regarding defects formation in the near-surface of silicon inversion MOS-structures.
Keywords :
MIS structures; elemental semiconductors; oxidation; silicon; defects formation; silicon inversion MOS structures; silicon oxidation parameters; Hafnium; Oxidation; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368849
