• DocumentCode
    1919615
  • Title

    Technique for Oxidation Parameters Definition, Based on Investigation of Defects Formation Images in Silicon Inversion MOS - Structures

  • Author

    Smyntyna, V.A. ; Kulinich, O.A. ; Glauberman, M.A. ; Chemeresyuk, G.G. ; Yatsunskiy, I.R. ; Sviridova, O.V.

  • Author_Institution
    Odessa Nat. Univ., Odessa
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    556
  • Lastpage
    557
  • Abstract
    Presented in this paper is the model allowing detecting some of silicon oxidation parameters (distribution of oxygen concentration at the depth, Wegard factors, relative tension), designed on the basis of investigations regarding defects formation in the near-surface of silicon inversion MOS-structures.
  • Keywords
    MIS structures; elemental semiconductors; oxidation; silicon; defects formation; silicon inversion MOS structures; silicon oxidation parameters; Hafnium; Oxidation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368849
  • Filename
    4368849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919615