DocumentCode
1919685
Title
Lifetime characterization of capacitive RF MEMS switches
Author
Goldsmith, C. ; Ehmke, J. ; Malczewski, A. ; Pillans, B. ; Eshelman, S. ; Yao, Z. ; Brank, J. ; Eberly, M.
Author_Institution
Raytheon Co., Dallas, TX, USA
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
227
Abstract
The first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated. Standard devices have been inserted into a time domain setup and their lifetimes have been characterized as a function of actuation voltage. Switch lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage. Resulting lifetimes were between 10/sup 4/ and 10/sup 8/ switch actuations, demonstrating an exponential relationship between lifetime and actuation voltage.
Keywords
life testing; microactuators; semiconductor switches; time-domain analysis; 30 to 65 V; actuation voltage; capacitive RF MEMS switches; dielectric charging; dual-pulse waveform; lifetime characterization; switch actuations; switch lifetimes; time domain setup; Biomembranes; Dielectric measurements; Equations; Ohmic contacts; Passive circuits; Radiofrequency microelectromechanical systems; Switches; Tunable circuits and devices; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966876
Filename
966876
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