• DocumentCode
    1919735
  • Title

    The Differential SiGe-HBT

  • Author

    Schüppen, A. ; König, U. ; Gruhle, A. ; Kibbel, H. ; Erben, U.

  • Author_Institution
    Daimler-Benz AG, Research Center, Wilhelm-Runge-Str. 11, D-89081 Ulm, Germany
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    A new fabrication method for SiGe-HBTs is presented using molecular beam epitaxy (MBE) for growing the device layers on SiO2 patterned Si wafers. The epitaxial layers inside the SiO2 windows are monocrystalline. The polycrystalline Si and SiGe on top of the surrounding SiO2 is used for the base contact. This technique reduces the parasitic base-collector capacitances. The first differential SiGe-HBTs (DHBTs) show good DC-characteristics and cut-off frequencies fT of 65 GHz and fmax of 38 GHz.
  • Keywords
    Cutoff frequency; Double heterojunction bipolar transistors; Electron devices; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Parasitic capacitance; Silicon germanium; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919735