Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18um CMOS

Author

Rold, M. Da ; Simoen, E. ; Badenes, G. ; Decoutere, S.

Author_Institution

IMEC, Leuven, Belgium

fYear

2000

fDate

11-13 September 2000

Firstpage

512

Lastpage

515

Keywords

Acoustical engineering; Boron; CMOS technology; Dielectrics; Implants; Lithography; MOS devices; Oxidation; Radio frequency; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194827

Filename

1503757

Link To Document