• DocumentCode
    1919804
  • Title

    Low-Frequency Noise Properties of Si/SiGe Heterojunction Bipolar Transistors

  • Author

    Plana, R. ; Roux, J.P. ; Escotte, L. ; Graffeuil, J. ; Gruhle, A. ; Kibbel, H.

  • Author_Institution
    LAAS-CNRS et Université Paul Sabatier Toulouse, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    481
  • Lastpage
    484
  • Abstract
    In this paper we present excellent low-frequency noise performances of passivated Si/SiGe heterojunction bipolar transistor. We report noise corner frequency in the 10 kHz range for the input noise voltage generator and in the 100 kHz range for the input noise current generator. We show that 1/f noise is probably generated both in the distributed base resistance and along the emitter finger.
  • Keywords
    Frequency; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise level; Noise measurement; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919804