DocumentCode
1919821
Title
Doped Carbon Nanotube 10,0 Characteristics
Author
Griadun, V.I.
Author_Institution
Zaporozhye Nat. Tech. Univ., Zaporozhye
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
573
Lastpage
574
Abstract
Models of carbon nanotubes (10,0) with impurities of B, N, and P atoms are designed within the limits of molecular mechanics method MM+. Calculations of energy-band structure of nanotubes have been carried out using the extended Huckel method. It is shown, that impurity boron and nitrogen atoms develop acceptor properties, while phosphorus atom forms an energy level near to the middle of the gap.
Keywords
EHT calculations; band structure; boron; carbon nanotubes; impurity states; nitrogen; phosphorus; semiconductor nanotubes; C:B; C:N; C:P; acceptor properties; energy-band structure; extended Huckel method; impurity boron atoms; impurity nitrogen atoms; molecular mechanics method; phosphorus atom; semiconductor carbon nanotube; Boron; Capacitive sensors; Carbon nanotubes; Doping; Energy states; Hydrogen; Impurities; Nanostructures; Nitrogen; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368856
Filename
4368856
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