Title :
Doped Carbon Nanotube 10,0 Characteristics
Author_Institution :
Zaporozhye Nat. Tech. Univ., Zaporozhye
Abstract :
Models of carbon nanotubes (10,0) with impurities of B, N, and P atoms are designed within the limits of molecular mechanics method MM+. Calculations of energy-band structure of nanotubes have been carried out using the extended Huckel method. It is shown, that impurity boron and nitrogen atoms develop acceptor properties, while phosphorus atom forms an energy level near to the middle of the gap.
Keywords :
EHT calculations; band structure; boron; carbon nanotubes; impurity states; nitrogen; phosphorus; semiconductor nanotubes; C:B; C:N; C:P; acceptor properties; energy-band structure; extended Huckel method; impurity boron atoms; impurity nitrogen atoms; molecular mechanics method; phosphorus atom; semiconductor carbon nanotube; Boron; Capacitive sensors; Carbon nanotubes; Doping; Energy states; Hydrogen; Impurities; Nanostructures; Nitrogen; Semiconductor process modeling;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368856
