Title :
ESD protection in deep submicron CMOS technology -- Does the transient matter?
Author :
Cheung, Kin P. ; Kamgar, Avid
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
fDate :
11-13 September 2000
Keywords :
Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Electrostatic discharge; Lead compounds; Protection; Pulse shaping methods; Semiconductor device measurement; Stress;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194830
