DocumentCode :
1919877
Title :
Resonant-Tunneling Diode Based on Schottky Contacts
Author :
Obukhov, I.A. ; Kvjatkevich, I.I.
Author_Institution :
Interface-MFG, Moscow
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
577
Lastpage :
579
Abstract :
Potential relief for electrons resonant tunneling is possible using two Schottky contacts with thin semiconductor film. Current-voltage characteristics calculated are N-shaped.
Keywords :
Schottky barriers; Schottky diodes; resonant tunnelling diodes; semiconductor thin films; N-shaped current-voltage characteristics; Schottky contacts; electrons resonant-tunneling diode; semiconductor thin films; Capacitance-voltage characteristics; Electrons; Resonant tunneling devices; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368858
Filename :
4368858
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919877
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