DocumentCode :
1919923
Title :
Wave-Guide Gain Flat Spectrum Construction in the GaxIn1-xAsySb1-y Asymmetric Multiple-Quantum-Well Heterostructures
Author :
Manak, I.S. ; Bialiausky, U.S. ; Ushakov, D.V.
Author_Institution :
Belarusian State Univ., Minsk
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
582
Lastpage :
583
Abstract :
The calculations of spectral characteristics of the GaxIn1-xAsySb1-y asymmetric multiple-quantum-well heterostructures with inhomogeneous excitation of quantum wells are presented. The availability of a wide flat spectrum of a wave-guide gain is shown.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor quantum wells; waveguides; wide band gap semiconductors; GaInAsSb; asymmetric multiple-quantum-well heterostructures; inhomogeneous excitation; wave-guide gain flat spectrum; Chemical lasers; Chemistry; Diodes; Laser theory; Optical design; Physics; Quantum well devices; Quantum well lasers; Solid state circuits; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368860
Filename :
4368860
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919923
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